MMBT3906 PNP Bipolar Transistor (BJT), SOT-23

₹400.00


MDD MMBT3906 general-purpose PNP switching transistor, SOT-23 SMD package. Rated 40V, 200mW, 200mA collector current, hFE gain of 100–300.

  • SKU: MS0001

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Description

The MMBT3906 is a widely used general-purpose PNP silicon switching transistor, the complementary counterpart to the NPN MMBT3904/2N3904. It’s rated for a maximum collector-base voltage of -40V, power dissipation of 200mW, and continuous collector current of -200mA, with a DC current gain (hFE) rank range of 100–300. Built using epitaxial planar die construction and housed in the compact SOT-23 surface-mount package, it operates across a wide -55°C to +150°C temperature range. Commonly used in general-purpose switching and small-signal amplification circuits, RoHS compliant.

Additional information

Weight (g)

NA

Brand / Manufacturer

MDD (Microdiode Semiconductor)

Key Specifications

PNP BJT · -40V · 200mW · -200mA · hFE 100-300 · SOT-23 · -55°C to 150°C · SMD

Manufacturer Part Number (MPN)

MMBT3906

Country of Origin

Taiwan

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